所属单位：化学工程学院
发表刊物：APPLIED PHYSICS LETTERS
项目来源：省、市、自治区科技项目
关键字：THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; AMORPHOUS-SILICON; CAPACITANCE; DIODES; PERFORMANCE; DIELECTRICS; DEPENDENCE
摘要：We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.
第一作者：王丽娟
论文类型：期刊论文
卷号：91
期号：15
页面范围：1
ISSN号：0003-6951
是否译文：否
发表时间：2007-10-08