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Wang lena

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(博SCI)Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

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Affiliation of Author(s):化学工程学院

Journal:APPLIED PHYSICS LETTERS

Funded by:省、市、自治区科技项目

Key Words:THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; AMORPHOUS-SILICON; CAPACITANCE; DIODES; PERFORMANCE; DIELECTRICS; DEPENDENCE

Abstract:We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

First Author:Wang lena

Indexed by:Journal paper

Volume:91

Issue:15

Page Number:1

ISSN No.:0003-6951

Translation or Not:no

Date of Publication:2007-10-08

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