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Affiliation of Author(s):化学工程学院

Journal:Solid-State Electronics

Funded by:省、市、自治区科技项目

Key Words:a-Si : H TFT; model; sub-threshold; drain-source voltage

Abstract:The improved sub-threshold drain-source current models of a-Si:H thin-film transistors (TFTs) is demonstrated in this paper. The current-voltage (I-P) characteristics of a-Si:H TFTs are revealed in both forward and reverse sub-threshold region. The I-Vcharacteristics exhibit a strong dependence on the gate-source voltage (VGs) and the drain-source voltage (VDs). The effects of weak electron distribution and a lateral component of the electric field on the a-Si:H TFT characteristics, which are induced by VDS at both front and back interface, are considered in current model. This strong dependence of the sub-threshold current on VDs is attributed to the channel length, drain-gate overlap vicinity, and process condition. Simulated results based on the model exhibit a good agreement with measured experimental data. The proposed model and the modeling process will be very useful for practical TFTs simulation.

First Author:Wang lena

Indexed by:Journal paper

Volume:51

Issue:5

Page Number:1

ISSN No.:0038-1101

Translation or Not:no

Date of Publication:2007-05-05